IXTQ200N06P - N-ChannelMOSFET

Features

Drain Source Voltage- : VDSS= 60V(Min).
Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max).
Fast Switching.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXTQ200N06P
Manufacturer	INCHANGE
File Size	267.94 KB
Description	N-ChannelMOSFET
Datasheet	IXTQ200N06P Datasheet
Additional preview pages of the IXTQ200N06P datasheet.

📁 Similar Datasheet

IXTQ200N06P - Power MOSFET (IXYS)
IXTQ200N075T - Power MOSFET (IXYS Corporation)
IXTQ200N085T - Power MOSFET (IXYS Corporation)
IXTQ200N10T - Power MOSFET (IXYS Corporation)
IXTQ220N055T - Power MOSFET (IXYS Corporation)
IXTQ220N075T - Power MOSFET (IXYS Corporation)
IXTQ22N50P - PolarHV Power MOSFET (IXYS)
IXTQ22N60P - PolarHV Power MOSFET (IXYS)
IXTQ230N085T - Power MOSFET (IXYS Corporation)
IXTQ23N60Q - Power MOSFETs Q-Class (IXYS Corporation)

Other Datasheets by INCHANGE

IXTQ200N075T - N-ChannelMOSFET
IXTQ200N085T - N-ChannelMOSFET
IXTQ200N10T - N-ChannelMOSFET
IXTQ220N055T - N-ChannelMOSFET
IXTQ22N50P - N-Channel MOSFET
IXTQ22N60P - N-Channel MOSFET
IXTQ230N085T - N-ChannelMOSFET
IXTQ23N60Q - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 200 A IDM Drain Current-Single Plused 400 A PD Total Dissipation @TC=25℃ 714 W Tj Max.

Published: Nov 21, 2020 |