IXTQ22N50P - N-Channel MOSFET

Features

With TO-3PN packaging.
With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXTQ22N50P
Manufacturer	INCHANGE
File Size	204.89 KB
Description	N-Channel MOSFET
Datasheet	IXTQ22N50P Datasheet
Additional preview pages of the IXTQ22N50P datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTQ22N50P ·FEATURES ·With TO-3PN packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 22 IDM Drain Current-Single Pulsed 66 PD Total Dissipation 350 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.35 UNIT ℃/W isc website：www.iscsemi.

Published: Sep 4, 2020 |