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IXTU1R4N60P Datasheet N-channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor IXTU1R4N60P ·.

Key Features

  • Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V.
  • Fully characterized avalanche voltage and current.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXTU1R4N60P from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
IXYS Logo IXTU1R4N60P Power MOSFET IXYS

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