IXTU1R4N60P - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXTU1R4N60P
Manufacturer	INCHANGE
File Size	270.12 KB
Description	N-Channel MOSFET
Datasheet	IXTU1R4N60P Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IXTU1R4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 1.4 A IDM Drain Current-Single Pulsed 2.

Published: Nov 23, 2020 |