IXTV22N50P - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-220F packaging.
With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXTV22N50P n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IXTV22N50P
Manufacturer	Inchange Semiconductor
File Size	232.34 KB
Description	N-Channel MOSFET
Datasheet	IXTV22N50P Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IXTV22N50P	Power MOSFET	IXYS
IXTV22N50PS	Power MOSFET	IXYS
IXTV22N60P	PolarHV Power MOSFET	IXYS
IXTV22N60PS	PolarHV Power MOSFET	IXYS
IXTV200N10T	Power MOSFET	IXYS Corporation

Other Datasheets by Inchange Semiconductor

Part Number	Description
IXTV22N60P	N-Channel MOSFET
IXTV230N085T	N-Channel MOSFET
IXTV250N075T	N-Channel MOSFET
IXTV26N50P	N-Channel MOSFET
IXTV26N60P	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTV22N50P ·FEATURES ·With TO-220F packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 22 IDM Drain Current-Single Pulsed 66 PD Total Dissipation 350 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.35 UNIT ℃/W isc website：www.iscsemi.