Full PDF Text Transcription for IXTV30N60P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTV30N60P. For precise diagrams, and layout, please refer to the original PDF.
With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 80 PD Total Dissipation 540 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.23 UNIT ℃/W isc website：www.iscsemi.
IXTV30N60P Datasheet
