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Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXTX110N20L2
·FEATURES ·With TO-3PL package ·Low input capacitance and gate charge ·High speed switching ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications ·Load switch ·Power management
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS Drain-Source Voltage
200
V
VGSS Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
110
A
IDM
Drain Current-Single Pulsed
275
A
PD
Total Dissipation @TC=25℃
960
W
Tj
Max.