IXTX200N10L2 - N-Channel MOSFET

Features

With TO-247 packaging.
With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation IXTX200N10L2.

INCHANGE

Datasheet Details

Part number	IXTX200N10L2
Manufacturer	Inchange Semiconductor
File Size	255.85 KB
Description	N-Channel MOSFET
Datasheet	IXTX200N10L2 Datasheet
Additional preview pages of the IXTX200N10L2 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation IXTX200N10L2 ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 200 160 500 PD Total Dissipation 1040 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.12 UNIT ℃/W isc website：www.iscsemi.

Published: Oct 7, 2020 |