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IXTY26P10T

Manufacturer: Inchange Semiconductor

IXTY26P10T datasheet by Inchange Semiconductor.

IXTY26P10T datasheet preview

IXTY26P10T Datasheet Details

Part number IXTY26P10T
Datasheet IXTY26P10T-INCHANGE.pdf
File Size 257.34 KB
Manufacturer Inchange Semiconductor
Description P-Channel MOSFET
IXTY26P10T page 2

IXTY26P10T Overview

·High side switching ·Push pull amplifiers ·Current regulators · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±15 V ID Drain Current-Continuous -26 A IDM Drain Current-Single Pulsed -80 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c)...

IXTY26P10T Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -High side switching -Push pull amplifiers -Current regulators

IXTY26P10T from other manufacturers

View IXTY26P10T datasheet index

Brand Logo Part Number Description Other Manufacturers
IXYS Logo IXTY26P10T Power MOSFET IXYS
Inchange Semiconductor logo - Manufacturer

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