IXTY2N60P
IXTY2N60P is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES
- Static drain-source on-resistance:
RDS(on) ≤ 5.1Ω@VGS=10V
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATION
- DC/DC Converter
- Ideal for high-frequency switching and synchronous rectification
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
Gate-Source Voltage
±30
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation @TC=25℃
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER...
