Inchange Semiconductor IXTY2N80P
N-Channel MOSFET
| Part No. | IXTY2N80P |
|---|---|
| Datasheet | IXTY2N80P Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V●Fully characterized avalanche voltage and current
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●APPLICATION
●DC/DC Converter
●Switch-Mode and Resonant-Mode Power Supplies
●Uninterrupted Power Supplies
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Pulsed 4 A PD Total Dissipation @TC=25℃ 70 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 1.79 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA VGS(th) Gate Threshold Voltage...