J6920 Description
·High Breakdown Voltage- : VCBO= 1700V (Min) ·Low Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCBO Collector-Base Breakdown Voltage IC= 500uA;IE= 0 VCEO Collector-Emitte Breakdown Voltage IC= 5mA;IB= 0 VEBO Emitte-Base Breakdown Voltage IE= 500uA;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=...