Datasheet Details
| Part number | J6920 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.38 KB |
| Description | NPN Transistor |
| Download | J6920 Download (PDF) |
|
|
| Part number | J6920 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.38 KB |
| Description | NPN Transistor |
| Download | J6920 Download (PDF) |
|
|
|
·High Breakdown Voltage- : VCBO= 1700V (Min) ·Low Saturation Voltage- : VCE(sat) = 3V (Max) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 20 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.625 UNIT ℃/W J6920 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCBO Collector-Base Breakdown Voltage IC= 500uA;IE= 0 VCEO Collector-Emitte Breakdown Voltage IC= 5mA;IB= 0 VEBO Emitte-Base Breakdown Voltage IE= 500uA;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 11A;
IB= 2.75A VBE(sat) Base-Emitter Saturation Voltage IC= 11A;
IB= 2.75A ICBO Collector Cutoff Current VCB= 800V ;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
J6920 | NPN Silicon Transistor | FAIRCHILD |
| Part Number | Description |
|---|