Inchange Semiconductor JCS2N60F
N-Channel MOSFET
| Part No. | JCS2N60F |
|---|---|
| Datasheet | JCS2N60F Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Low gate charge●High speed switching
●Low on-resistance
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●High frequency switching mode power supply●Electronic ballast
●UPS
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 2.0 1.3 6.0 PD Total Dissipation 23 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 5.5 62.5 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage V...