Datasheet4U Logo Datasheet4U.com

JCS650S - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= 28A@ TC=25℃.
  • Drain Source Voltage- : VDSS=200V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =85mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
JCS650S N-Channel MOSFET JILIN SINO-MICROELECTRONICS
JCS650 N-Channel MOSFET JILIN SINO-MICROELECTRONICS
JCS650C N-Channel MOSFET JILIN SINO-MICROELECTRONICS
JCS650F N-Channel MOSFET JILIN SINO-MICROELECTRONICS
JCS65N20ABT N-CHANNEL MOSFET JILIN SINO-MICROELECTRONICS

Other Datasheets by Inchange Semiconductor

Part Number Description
JCS2N60F N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor JCS650S FEATURES ·Drain Current –ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =85mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 28 A IDM Drain Current-Single Pluse 112 A PD Total Dissipation @TC=25℃ 158 W TJ Max.