Inchange Semiconductor KSA614
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | KSA614 |
|---|---|
| Datasheet | KSA614 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -55V (Min.)●Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V (Max.)@ IC= -1A
●Collector Power Dissipation- : PC= 25W@ TC= 25℃
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Low frequency power amplifier●Power regulator
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -55 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A PC Collector Power Dissipation 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -500μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -500μA; IC=...