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KSA940TU - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) DC Current Gain : hFE= 40-140@ IC= -0.5A Complement to Type KSC2073TU Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifi

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isc Silicon PNP Power Transistor INCHANGE Semiconductor KSA940TU DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type KSC2073TU ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -150 V -150 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 V -1.