Datasheet Details
| Part number | KSA940TU |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.93 KB |
| Description | PNP Transistor |
| Datasheet | KSA940TU-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor KSA940TU.
| Part number | KSA940TU |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.93 KB |
| Description | PNP Transistor |
| Datasheet | KSA940TU-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·plement to Type KSC2073TU ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier , vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -150 V -150 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 V -1.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor KSA940TU ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KSA940 | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
 |
KSA940 | Vertical Deflection Output Power Amplifier | ON Semiconductor |
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