Low Collector Saturation Voltage-
: VCE(sat)= -1.7V(Max)@IC= -3A
Good Linearity of hFE
Complement to Type KSD1408
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power amplifier applicati
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isc Silicon PNP Power Transistor
KSB1017
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type KSD1408 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 20~25W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.
KSB1017 Datasheet
