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isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Current:IC= -7A ·Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-frequency power amplifiers and
low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM IB
PC
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous Total Power Dissipation @ Ta=25℃ Total Power Dissipation @ TC=25℃ Junction Temperature
-80
V
-60
V
-7
V
-7
A
-15
A
-3.5
A
2 W
30
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
KSB1097
isc website：www.iscsemi.
KSB1097 Datasheet
