Datasheet Details
| Part number | KSC2333 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.50 KB |
| Description | NPN Transistor |
| Datasheet | KSC2333-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | KSC2333 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.50 KB |
| Description | NPN Transistor |
| Datasheet | KSC2333-INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 400V(Min) ·High Speed Switching ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and ultrasonic appliance applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSC2333 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor KSC2333 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSC2333 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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