Datasheet Details
| Part number | KSC5021F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.49 KB |
| Description | NPN Transistor |
| Datasheet | KSC5021F-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | KSC5021F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.49 KB |
| Description | NPN Transistor |
| Datasheet | KSC5021F-INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V(Min) ·Collector Current-IC= 5A(Max.) ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in drivers such as DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 800 VCEO Collector-Emitter Voltage 500 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 5 ICM Collector Current-Peak 10 IB Base Current-Continuous 2 PT Total Power Dissipation @ TC=25℃ 40 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.125 ℃/W KSC5021F isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors KSC5021F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KSC5021F | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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KSC5021F | NPN Transistor | JCET |
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KSC5021 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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KSC5021 | NPN Epitaxial Silicon Transistor | Samsung semiconductor |
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KSC5021 | SILICON POWER TRANSISTOR | SavantIC |
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