Inchange Semiconductor KSD288
Silicon NPN Power Transistor
| Part No. | KSD288 |
|---|---|
| Datasheet | KSD288 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Base Breakdown Voltage- : V(BR)CBO= 80V(Min)●Collector Current- IC= 3A
●Collector Power Dissipation- : PC= 25W@ TC= 25℃
APPLICATIONS
●Power regulator●Low frequency high power amplifier
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD362ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICBO Collector Cutoff Current VCB= 50V; IE= 0 hFE DC Current Gain IC= 0.5A; VCE= 5V MIN TYP.