KSD363
Overview
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | KSD363 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 210.73 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| KD333 | Tesla Elektronicke | Transistor |
| C828 | SEMTECH | NPN Silicon Transistor |
| BDT88 | Inchange Semiconductor | Silicon PNP Power Transistor |