Datasheet Summary
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
- Collector Power Dissipation-
: PC= 40W(Max)@ TC= 25℃
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for B/W TV horizontal deflection output...
