Inchange Semiconductor KSD569
Silicon NPN Power Transistor
| Part No. | KSD569 |
|---|---|
| Datasheet | KSD569 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector Current:: IC= 7A●Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A
●Complement to Type KSB708
APPLICATIONS
●Designed for low-frequency power amplifiers and low-speed switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 7V 7A ICM Collector Current-Peak 15 A IB Base Current-Continuous Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 3.5 A 40 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD569ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC...