Inchange Semiconductor KSD794
Silicon NPN Power Transistor
| Part No. | KSD794 |
|---|---|
| Datasheet | KSD794 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector Current -IC= 3A●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min)
●Complement to Type KSB744
APPLICATIONS
●Designed for use in audio frequency amplifier.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 5V 3A ICP Collector Current-Pulse 5A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range 0.6 A 10 W 1 150 ℃ -55~150 ℃ isc website： 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD794ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A ICBO Collector Cutoff Current VCB= 45V; IE= 0 IEBO Emitter Cutoff Current VE...