Inchange Semiconductor KSD985
Silicon NPN Power Transistor
| Part No. | KSD985 |
|---|---|
| Datasheet | KSD985 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector–Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.)●DC Current Gain- : hFE = 2000(Min) @ IC= 1A
●Low Collector Saturation Voltage
APPLICATIONS
●They are suitable for use to operate from IC without predriver, such as hammer driver.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8V IC Collector Current-Continuous 1.5 A ICM Collector Current-Pulse 3.0 A IB Base Current Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 0.15 A 1.0 W 10 150 ℃ -55~150 ℃ isc website： 1 INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KSD985ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 1m...