Inchange Semiconductor KSE210
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | KSE210 |
|---|---|
| Datasheet | KSE210 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector Current-IC= -5A●Low Saturation Voltage - : VCE(sat)= -0.3V(Max)@ IC= -0.5A, IB= -50mA
●Good Linearity of hFE
●Complement to Type KSE200
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Suited for watts audio amplifier, voltage regulator, DC-DC converter and relay driver.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ KSE210 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KSE210ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -25 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A;...