Datasheet Details
| Part number | KSE210 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.01 KB |
| Description | PNP Transistor |
| Datasheet | KSE210-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | KSE210 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.01 KB |
| Description | PNP Transistor |
| Datasheet | KSE210-INCHANGE.pdf |
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·High Collector Current-IC= -5A ·Low Saturation Voltage - : VCE(sat)= -0.3V(Max)@ IC= -0.5A, IB= -50mA ·Good Linearity of hFE ·plement to Type KSE200 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suited for watts audio amplifier, voltage regulator, DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ KSE210 isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KSE210 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
KSE210 | PNP Transistor | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
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