Inchange Semiconductor KSE340
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | KSE340 |
|---|---|
| Datasheet | KSE340 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter breakdown voltage●Low Collector Saturation Voltage
●Complement to Type KSE350
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High voltage general purpose applications●Suitable for transform
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.5 A 20 W 1.3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain CONDITIONS VCB= 300V; IE= 0 VEB= 3V; IC= 0 IC= 50mA; VCE= -10V KSE340 MIN TYP. MAX UNIT 100 μA 100 μA 30 240 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.