Datasheet Details
| Part number | KSE340 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.04 KB |
| Description | NPN Transistor |
| Datasheet | KSE340-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor KSE340.
| Part number | KSE340 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.04 KB |
| Description | NPN Transistor |
| Datasheet | KSE340-INCHANGE.pdf |
|
|
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·High Collector-Emitter breakdown voltage ·Low Collector Saturation Voltage ·plement to Type KSE350 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage general purpose applications ·Suitable for transform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.5 A 20 W 1.3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain CONDITIONS VCB= 300V;
IE= 0 VEB= 3V;
IC= 0 IC= 50mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
KSE340 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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|---|---|
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