Datasheet Details
| Part number | KSE350 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.28 KB |
| Description | PNP Transistor |
| Datasheet | KSE350-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor KSE350.
| Part number | KSE350 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.28 KB |
| Description | PNP Transistor |
| Datasheet | KSE350-INCHANGE.pdf |
|
|
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·High Collector-Emitter breakdown voltage ·Low Collector Saturation Voltage ·plement to Type KSE340 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage general purpose applications ·Suitable for transform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -0.5 A 20 W 1.3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain CONDITIONS VCB= -300V;
IE= 0 VEB= -3V;
IC= 0 IC=- 50mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
KSE350 | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
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|---|---|
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