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KSH112 - NPN Transistor

Datasheet Summary

Description

High DC current gain Built-in a damper diode at E-C Electrically similar to popular TIP112 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switchi

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Datasheet Details

Part number KSH112
Manufacturer INCHANGE
File Size 252.38 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Electrically similar to popular TIP112 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICP Collector Current-Pulse PC Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ TJ Junction Temperature 4 A 1.75 W 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSH112 isc website：www.
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