Datasheet Details
| Part number | KSH112 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 252.38 KB |
| Description | NPN Transistor |
| Datasheet | KSH112-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | KSH112 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 252.38 KB |
| Description | NPN Transistor |
| Datasheet | KSH112-INCHANGE.pdf |
|
|
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·High DC current gain ·Built-in a damper diode at E-C ·Electrically similar to popular TIP112 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICP Collector Current-Pulse PC Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ TJ Junction Temperature 4 A 1.75 W 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSH112 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSH112 | NPN Transistor | Fairchild Semiconductor |
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