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KSH117 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor KSH117.

General Description

·High DC current gain ·Built-in a damper diode at E-C ·Electrically similar to popular TIP117 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse PC Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ TJ Junction Temperature -4 A 1.75 W 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor KSH117 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -2A;

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