Datasheet Details
| Part number | KSH127 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 252.01 KB |
| Description | PNP Transistor |
| Datasheet | KSH127-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | KSH127 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 252.01 KB |
| Description | PNP Transistor |
| Datasheet | KSH127-INCHANGE.pdf |
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·High DC current gain ·Built-in a damper diode at E-C ·Electrically similar to popular TIP127 ·DPAK for surface mount applications ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Pulse PC Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ TJ Junction Temperature -16 A 1.75 W 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ KSH127 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSH127 | PNP Transistor | Fairchild Semiconductor |
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|---|---|
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