Datasheet4U.com

KSH127 Datasheet PDF

Inchange Semiconductor KSH127

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. KSH127
Datasheet KSH127 Download
Manufacturer
Inchange Semiconductor
Description PNP Transistor
Buy Stock & Price
KSH127 datasheet page 1 preview

DESCRIPTION

●High DC current gain
●Built-in a damper diode at E-C
●Electrically similar to popular TIP127
●DPAK for surface mount applications
●Lead formed for surface mount applications(NO suffix)
●Straight lead(IPAK,“-I”suffix)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed for general purpose amplifier and low speed switching applications.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Pulse PC Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ TJ Junction Temperature -16 A 1.75 W 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ KSH127 isc website: 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collec...
KSH127 page 2 preview KSH127 page 3 preview