KSH200 Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor KSH200 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VCE(sat)-3 Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(on) Base-Emitter On...