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isc Silicon PNP Power Transistor
DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·DPAK for surface mount applications ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-40
V
VCEO Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-5
A
IC
Collector Current-Pulse
PC
Total Power Dissipation @ Ta=25℃
PC
Total Power Dissipation @ TC=25℃
-10
A
1.4
W
12.
KSH210 Datasheet
