Datasheet Details
| Part number | KSH210 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 248.91 KB |
| Description | PNP Transistor |
| Datasheet | KSH210-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | KSH210 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 248.91 KB |
| Description | PNP Transistor |
| Datasheet | KSH210-INCHANGE.pdf |
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·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·DPAK for surface mount applications ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -5 A IC Collector Current-Pulse PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ -10 A 1.4 W 12.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSH210 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KSH210 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 -25 V VCE(sat)-1* Collector-Emitter Saturation Voltage VCE(sat)-2* Collector-Emitter Saturation Voltage VCE(sat)-3* Collector-Emitter Saturation Voltage VBE(sat)* Base-Emitter Saturation Voltage VBE(on)* Base-Emitter On Voltage ICBO Collector Cutoff Current IC=- 0.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KSH210 | PNP Transistor | Fairchild Semiconductor |
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