Inchange Semiconductor KSH210
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | KSH210 |
|---|---|
| Datasheet | KSH210 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC current gain●Built-in a damper diode at E-C
●Lead formed for surface mount applications(NO suffix)
●Straight lead(IPAK,“－I”suffix)
●DPAK for surface mount applications
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power amplifierABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -5 A IC Collector Current-Pulse PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ -10 A 1.4 W 12.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSH210 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KSH210ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -25 V VCE(sat)-1...
