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isc Silicon NPN Power Transistor
DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·DPAK for surface mount applications ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
KSH3055
APPLICATIONS ·General purpose amplifier low speed switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
70
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
Total Power Dissipation @ Ta=25℃
PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
6
A
1.
KSH3055 Datasheet
