Datasheet Details
| Part number | KSH31C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 247.76 KB |
| Description | NPN Transistor |
| Datasheet | KSH31C-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | KSH31C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 247.76 KB |
| Description | NPN Transistor |
| Datasheet | KSH31C-INCHANGE.pdf |
|
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·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Electrically similar to popular TIP31C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplifier low speed switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ 3 A 1.56 W 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSH31C isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat)* VBE(on)* ICBO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSH31C | NPN Transistor | Fairchild Semiconductor |
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KSH31 | NPN Transistor | Fairchild Semiconductor |
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