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KSH350 - PNP Transistor

Datasheet Summary

Description

Lead formed for surface mount applications(NO suffix) Straight lead(IPAK,“－I”suffix) DPAK for surface mount applications 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage power transistors

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Datasheet Details

Part number KSH350
Manufacturer INCHANGE
File Size 245.80 KB
Description PNP Transistor
Datasheet download datasheet KSH350 Datasheet
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isc Silicon PNP Power Transistor DESCRIPTION ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·DPAK for surface mount applications ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage power transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -3 V IC Collector Current-Continuous PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ -0.5 A 1.56 W 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSH350 isc website：www.iscsemi.
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