Datasheet Details
| Part number | KSH350 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 245.80 KB |
| Description | PNP Transistor |
| Datasheet | KSH350-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | KSH350 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 245.80 KB |
| Description | PNP Transistor |
| Datasheet | KSH350-INCHANGE.pdf |
|
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·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·DPAK for surface mount applications ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage power transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -3 V IC Collector Current-Continuous PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ -0.5 A 1.56 W 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSH350 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KSH350 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC= -1mA;
IB= 0 ICBO Collector Cutoff Current VCB= -300V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSH350 | PNP Transistor | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
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| KSH122 | NPN Transistor |
| KSH122I | NPN Transistor |
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| KSH200 | NPN Transistor |