Inchange Semiconductor KSH350
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | KSH350 |
|---|---|
| Datasheet | KSH350 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Lead formed for surface mount applications(NO suffix)●Straight lead(IPAK,“－I”suffix)
●DPAK for surface mount applications
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High voltage power transistorsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -3 V IC Collector Current-Continuous PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ -0.5 A 1.56 W 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSH350 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KSH350ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 ICBO Collector Cutoff Current VCB= -300V; IE= 0 IEBO Emitter Cutoff Current VEB=-3V; IC= 0 hFE1* DC C...
