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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KSH44H11I
DESCRIPTION ·Straight lead(IPAK,“-I”suffix) ·Electrically similar to popular KSE44H ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·Power amplifier ·Converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Pulse
Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃
TJ
MAX.Junction Temperature
16
A
1.75 W
20
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
isc website:www.iscsemi.