KSH44H11I Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor KSH44H11I TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation Voltage IC=8A; IB= 400mA Base-Emitter Saturation Voltage IC=8A;.
