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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
KSH45H11I
DESCRIPTION ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Electrically similar to popular KSE45H ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·General purpose power and switching such as output
or driver stages in applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICP
Collector Current-Pulse
Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-16
A
1.
KSH45H11I Datasheet
