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KSH47 Datasheet PDF

Inchange Semiconductor KSH47

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. KSH47
Datasheet KSH47 Download
Manufacturer
Inchange Semiconductor
Description NPN Transistor
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KSH47 datasheet page 1 preview

DESCRIPTION

●Lead formed for surface mount applications(NO suffix)
●Straight lead(IPAK,“-I”suffix)
●Electrically similar to popular TIP47
●High voltage and high reliability
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●designed for line operated audio output amplifier

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICP Collector Current-Pulse PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 1.56 W 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSH47 isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)* VBE(on)* ICEO Col...
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