Datasheet Details
| Part number | KSH50 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 246.85 KB |
| Description | NPN Transistor |
| Datasheet | KSH50-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | KSH50 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 246.85 KB |
| Description | NPN Transistor |
| Datasheet | KSH50-INCHANGE.pdf |
|
|
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·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Electrically similar to popular TIP50 ·High voltage and high reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·designed for line operated audio output amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICP Collector Current-Pulse PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 1.56 W 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSH50 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat)* VBE(on)* ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=1A;
IB= 200mA IC= 1A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSH50 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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