KT829A Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor KT829A TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA;.