| Part number | KT829A |
|---|---|
| Datasheet | KT829A-INCHANGE.pdf |
| File Size | 208.86 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor KT829A TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| ETC | KT829A | NPN Transistor | ETC |
| ETC | KT829A | KT829A/KT829B NPN Transistor | ETC |
| ETC | KT829 | NPN Transistor | ETC |
| ETC | KT829 | NPN Transistor #2 | ETC |
| ETC | KT829 | NPN Transistor #3 | ETC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| KT8232A1 | NPN Transistor |
| KT815A | NPN Transistor |
