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KTA1046 - PNP Transistor

General Description

Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) Complement to Type KTC2026 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in g

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isc Silicon PNP Power Transistors DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Complement to Type KTC2026 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature -0.5 A 25 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTA1046 isc website： www.