Datasheet Details
| Part number | KTA1276 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.46 KB |
| Description | PNP Transistor |
| Datasheet | KTA1276-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | KTA1276 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.46 KB |
| Description | PNP Transistor |
| Datasheet | KTA1276-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= -30V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 20 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance, Junction to Ambient 63 ℃/W KTA1276 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KTA1276 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KTA1276 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
| Part Number | Description |
|---|---|
| KTA1046 | PNP Transistor |
| KTA1381 | PNP Transistor |
| KTA968A | PNP Transistor |