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KTA1276 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -30V(Min) Good Linearity of hFE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for general purpose applications.

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -30V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 20 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance, Junction to Ambient 63 ℃/W KTA1276 isc website：www.iscsemi.