KTA968A Description
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·plement to Type KTC2238A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KTA968A Tj=25℃ unless otherwise specified SYMBOL...