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KTA968A - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -180V(Min) Good Linearity of hFE Complement to Type KTC2238A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and general purp

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isc Silicon PNP Power Transistor KTA968A DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type KTC2238A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.