Inchange Semiconductor KTB631K
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | KTB631K |
|---|---|
| Datasheet | KTB631K Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector Current-IC=-1.0A●High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min)
●Good Linearity of hFE
●Low Saturation Voltage
●Complement to Type KTD600K
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power amplifier applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -120 V -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -2 A 8 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor KTB631K isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor KTB631KELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Vol...
