KTB631K - PNP Transistor

Inchange Semiconductor

General Description

High Collector Current-IC=-1.0A High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type KTD600K 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable op

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Datasheet Details

Part number	KTB631K
Manufacturer	Inchange Semiconductor
File Size	213.11 KB
Description	PNP Transistor
Datasheet	KTB631K Datasheet

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type KTD600K ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -120 V -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -2 A 8 W 1.