Datasheet Details
| Part number | KTB631K |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.11 KB |
| Description | PNP Transistor |
| Datasheet | KTB631K-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | KTB631K |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.11 KB |
| Description | PNP Transistor |
| Datasheet | KTB631K-INCHANGE.pdf |
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·High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type KTD600K ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -120 V -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -2 A 8 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor KTB631K isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor KTB631K ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= -10μA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KTB631K | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
| Part Number | Description |
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