Inchange Semiconductor KTC2201
Silicon NPN Power Transistors
| Part No. | KTC2201 |
|---|---|
| Datasheet | KTC2201 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)●High Switching Speed
●Wide Area of Safe Operation
APPLICATIONS
●Switching regulator applicaition.●High voltage switching application.
●High speed DC-DC converter application.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 8A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTC2201ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-B