Datasheet Details
| Part number | KTC2238 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.65 KB |
| Description | NPN Transistor |
| Datasheet | KTC2238-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors KTC2238.
| Part number | KTC2238 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.65 KB |
| Description | NPN Transistor |
| Datasheet | KTC2238-INCHANGE.pdf |
|
|
|
·Low Saturation Voltage- : VCE(sat)=1.5V(Max)@ (IC= 0.5A, IB= 50mA) ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Complement to Type KTA968 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IE Emitter Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 1.5 A 25 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance, Junction to Ambient 63 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KTC2238 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
|
KTC2238A | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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|---|---|
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