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KTC2238 - NPN Transistor

General Description

Low Saturation Voltage- : VCE(sat)=1.5V(Max)@ (IC= 0.5A, IB= 50mA) High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) Complement to Type KTA968 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high volt

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isc Silicon NPN Power Transistors KTC2238 DESCRIPTION ·Low Saturation Voltage- : VCE(sat)=1.5V(Max)@ (IC= 0.5A, IB= 50mA) ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Complement to Type KTA968 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IE Emitter Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 1.