Datasheet Summary
isc Silicon NPN Power Transistors
DESCRIPTION
- Low Saturation Voltage-
: VCE(sat)=1.5V(Max)@ (IC= 0.5A, IB= 50mA)
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min)
- plement to Type KTA968A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high voltage and general purpose...
