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KTC3503 - NPN Transistor

General Description

Low Collector Saturation Voltage High breakdown voltage Silicon NPN epitaxial planar transistor Small reverse transfer capacitance and excellent high frequency characteristic Complement to KTA1381 100% avalanche tested Minimum Lot-to-Lot variations for robust devic

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isc Silicon NPN Power Transistor INCHANGE Semiconductor KTC3503 DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage ·Silicon NPN epitaxial planar transistor ·Small reverse transfer capacitance and excellent high frequency characteristic ·Complement to KTA1381 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high definition CRT display ,video output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 0.