Datasheet Details
| Part number | KTC4369 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.49 KB |
| Description | NPN Transistor |
| Datasheet | KTC4369-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | KTC4369 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.49 KB |
| Description | NPN Transistor |
| Datasheet | KTC4369-INCHANGE.pdf |
|
|
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·Low Saturation Voltage- : VCE(sat)=0.8V(Max)@ (IC= 2A, IB= 0.2A) ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 30V(Min) ·Complement to Type KTA1658 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 30 V 5 V 3 A 0.3 A 15 W 150 ℃ -55~150 ℃ KTC4369 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors KTC4369 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KTC4369 | NPN Transistor | JCET |
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KTC4369 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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