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LD411660
Standard Rectifier Diode
FEATURES ·Low leakage current ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·These devices are ideally suited for power converters,
motors drives and other applications where switching losses are significant portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
CONDITIONS
VR
IF(AV) IFSM I2t TJ Tstg
Repetitive Peak Reverse Voltage Average Forward Current Surge Forward Current I2t for Fusing for One Cycle Junction Temperature Storage Temperature Range
TC=100℃ t=10ms,50Hz,sine
VALUE UNIT
1600
V
600
A
18000
A
1650000
A2S
-40~125
℃
-40~125
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.
LD411660 Datasheet
